Adsorption-controlled growth of Ga₂O₃ by suboxide molecular-beam epitaxy

Growth of nanoscale BaTiO3/SrTiO3 superlattices by molecular-beam epitaxy

Same as Report (SAR) 18. NUMBER

Growth of AlN by metalorganic molecular beam epitaxy

Thin film AlN has been grown on Al2O3 and GaAs substrates by metalorganic molecular beam epitaxy using amine bonded alane precursors and either tertiarybutylamine or nitrogen from a compact electron cyclotron resonance �ECR� plasma source operating at 2.45 GHz. Typical growth pressures were in the 0.5–1�10�4 Torr range. The growth rates, impurity backgrounds, and surface morphologies were exami...

Growth of InN on Ge substrate by molecular beam epitaxy

InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1)InNJ(1 1 1)Ge. Transmission electron microscopy shows an intermediate layer at the inter...

Growth mechanism of AlN by metal-organic molecular beam epitaxy

The phenomena that accompany the growth of aluminum nitride (AlN) by metal-organic molecular beam epitaxy with trimethylaluminum and ammonia as sources of aluminum and nitrogen, respectively, have been systematically investigated. Optimizing the growth temperature, flux ratios, and the ammonia injector temperature, we obtained an efficient growth with a rate of 500 nm/h and a low consumption of...

Growth of GaN on porous SiC by molecular beam epitaxy